Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
transistor à couche de déplétion profonde — tranzistorius su labai nuskurdintu sluoksniu statusas T sritis radioelektronika atitikmenys: angl. deep depletion layer transistor vok. Transistor mit Hochverarmungsschicht, m rus. транзистор с глубокообеднённым слоем, m; транзистор со сильно… … Radioelektronikos terminų žodynas
Transistor mit Hochverarmungsschicht — tranzistorius su labai nuskurdintu sluoksniu statusas T sritis radioelektronika atitikmenys: angl. deep depletion layer transistor vok. Transistor mit Hochverarmungsschicht, m rus. транзистор с глубокообеднённым слоем, m; транзистор со сильно… … Radioelektronikos terminų žodynas
transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… … Universalium
tranzistorius su labai nuskurdintu sluoksniu — statusas T sritis radioelektronika atitikmenys: angl. deep depletion layer transistor vok. Transistor mit Hochverarmungsschicht, m rus. транзистор с глубокообеднённым слоем, m; транзистор со сильно обеднённым слоем, m pranc. transistor à couche… … Radioelektronikos terminų žodynas
транзистор с глубокообеднённым слоем — tranzistorius su labai nuskurdintu sluoksniu statusas T sritis radioelektronika atitikmenys: angl. deep depletion layer transistor vok. Transistor mit Hochverarmungsschicht, m rus. транзистор с глубокообеднённым слоем, m; транзистор со сильно… … Radioelektronikos terminų žodynas
транзистор со сильно обеднённым слоем — tranzistorius su labai nuskurdintu sluoksniu statusas T sritis radioelektronika atitikmenys: angl. deep depletion layer transistor vok. Transistor mit Hochverarmungsschicht, m rus. транзистор с глубокообеднённым слоем, m; транзистор со сильно… … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Mathematics and Physical Sciences — ▪ 2003 Introduction Mathematics Mathematics in 2002 was marked by two discoveries in number theory. The first may have practical implications; the second satisfied a 150 year old curiosity. Computer scientist Manindra Agrawal of the… … Universalium
